- 您现在的位置：买卖IC网 > Sheet目录461 > IXTH150N17T (IXYS)MOSFET N-CH 175V 150A TO-247
IXTH150N17T
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
75
118
9800
S
pF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
1110
pF
1
2
3
?P
C rss
60
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
22
30
58
30
ns
ns
ns
ns
Terminals: 1 - Gate
e
2 - Drain
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
155
40
47
0.21
nC
nC
nC
0.18 ° C/W
° C/W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
I S V GS = 0V
I SM Repetitive, Pulse width limited by T JM
V SD
I F = 50A, V GS = 0V, Note 1
t rr
I F = 75A, V GS = 0V
-di/dt = 200A/ μ s
I RM
V R = 85V
Q RM
Characteristic Values
Min. Typ. Max.
150
400
1.2
120
1.05
17.5
A
A
V
ns
A
nC
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH152N085T
MOSFET N-CH 85V 152A TO-247
IXTH15N50L2
MOSFET N-CH 15A 500V TO-247
IXTH160N075T
MOSFET N-CH 75V 160A TO-247
IXTH160N15T
MOSFET N-CH 150V 160A TO-247
IXTH16P20
MOSFET P-CH 200V 16A TO-247
IXTH180N10T
MOSFET N-CH 100V 180A TO-247
IXTH182N055T
MOSFET N-CH 55V 182A TO-247
IXTH200N085T
MOSFET N-CH 85V 200A TO-247
相关代理商/技术参数
IXTH152N085T
功能描述:MOSFET 152 Amps 85V 6.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH15N35MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N35MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N40MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N40MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N45A
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 15A I(D) | TO-247
IXTH15N50A
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247
IXTH15N50L2
功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 15A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube